Quantum corrections to conductivity in an amorphous semiconductor
(Article submitted by a member of the editorial board S. E. Savotchenko)
DOI:
https://doi.org/10.52575/2687-0959-2022-54-3-186-191Keywords:
dirac semimetal, cadmium arsenide, thin films, weak antilocalizationAbstract
This article presents the results of a study of the magnetoresistance (MR) of a thin film of cadmium arsenide deposited on a sapphire leucosapphire substrate. In the study of MR, the effect of weak antilocalization, which arises due to surface states, was observed. The observed effect is well described by the Hikami-Larkin-Nagaoka model. The calculated value of the phase coherence length Lф varies depending on the temperature T according to the power law Lф ∼ T −1/2, which indicates the presence of two-dimensional topological surface states.
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