Distribution Imaging of Charge Implanted into SiO2/Si using a Focused Ion Beam by a Liquid Crystal Cell
DOI:
https://doi.org/10.52575/2687-0959-2026-58-2-195-205Keywords:
FIB, Charge Implanted in Oxide, Fredericksz EffectAbstract
It has been experimentally demonstrated that in a liquid crystal cell in which one of the substrates is a SiO2/Si structure with an implanted charge in the SiO2 film by means of a focused Ga+ ion beam in a scanning ion microscope imaging of this charge distribution is possible using the Fredericksz effect. Visualization of irradiated SiO2 areas without additional surface treatment is made possible by the difference in the birefringence of the liquid crystal over areas with different irradiation doses. It was found that irradiation of SiO2 with a dose of 1011 ions/см2 causes the formation of an inclined orientation of 5CB liquid crystal molecules on the SiO2 surface. Visualization of irradiated SiO2 surface areas in a cell with a planar liquid crystal orientation obtained by polyimide covering is based on the difference in the birefringence of the liquid crystal over areas with different irradiation doses. This difference arises from the redistribution of the voltage applied to the cell between the liquid crystal and the SiO2/Si structure due to the formation of a depletion layer near the surface of silicon. The formation of the depletion layer is influenced by the electric field of the implanted charge in SiO2 and, presumably, by leakage currents in Si through defects in the SiO2 film. An estimate of the minimum irradiation dose of SiO2 detected in a planar liquid crystal cell yields a value of ∼ 2*106 ions/см2.
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