The effect of the orientation of NiSb single crystal needles on the electrical conductivity of composite single crystals (InSb)98:2 - (NiSb)1:8

Authors

DOI:

https://doi.org/10.52575/2687-0959-2024-56-4-314-319

Keywords:

InSb-NiSb, Single Crystal, Electrical Properties, Hopping Conductivity

Abstract

The aim of the work is to study the electrical conductivity of composite single crystals (InSb)98.2 – (NiSb)1.8. Single crystals of the composite eutectic system (InSb)98.2 – (NiSb)1.8 were obtained using the modified Bridgman method. The composition and distribution homogeneity of elements were determined by the energy-dispersive X-ray spectroscopy method using a JSM-6610LV (Jeol) scanning electron microscope. The intervals of hopping conductivity with a variable jump length of the Shklovsky-Efros type and by the nearest neighbors were determined for samples with different orientations of needle-shaped inclusions of NiSb single crystals.

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Author Biographies

Vasiliy S. Zakhvalinskii, Belgorod National Research University

Doctor of Physical and Mathematical Sciences, Professor of the Department of Theoretical and Experimental Physics, Belgorod National Research University,
Belgorod, Russia
E-mail: zakhvalinskii@bsuedu.ru
ORCID: 0000-0001-7055-8243

Aleksandr Borisenko, Belgorod National Research University

Graduate Student, Belgorod National Research University,
Belgorod, Russia
E-mail: borisenko02.94@mail.ru
ORCID: 0000-0002-2539-3096

Alexey V. Mashirov, V. A. Kotelnikov IRE of the Russian Academy of Sciences

Candidate of Physical and Mathematical Sciences, Senior Researcher at the Laboratory of Magnetic Phenomena, V. A. Kotelnikov IRE of the Russian Academy of Sciences,
Moscow, Russia
E-mail: a.v.mashirov@mail.ru
ORCID: 0000-0001-9447-9339

Alexey V. Kochura, Southwestern State University

Candidate of Physical and Mathematical Sciences, Assosiate Professor, Deputy Director of the Regional Center for Nanotechnology, Southwestern State University,
Kursk, Russia
E-mail: akochura@mail.ru
ORCID: 0000-0002-7941-8404

Evgeniy A. Pilyuk, Belgorod National Research University

Candidate of Physical and Mathematical Sciences, Senior Researcher at the Laboratory of Advanced Materials and Technologies, Belgorod National Research University,
Belgorod, Russia
E-mail: pilyuk@bsuedu.ru
ORCID: 0000-0003-4979-5724

Valentin V. Sobolev, Izhevsk State Technical University named after M. T. Kalashnikov

Doctor of Physical and Mathematical Sciences, Professor of the Department of Physics, Izhevsk State Technical University named after M. T. Kalashnikov,
Izhevsk, Russia
E-mail: soboleff.val@yandex.ru
ORCID: 0000-0001-7909-9629

References

Razeghi M. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices. The European Physical Journal-Applied Physics. 2003;23(3):149-205. DOI:10.1051/epjap:2003056

Weiss H. Structure and Application of Galvanomagnetic Devices: International Series of Monographs on Semiconductors. New York; 2014. 362 p.

Su M, Li J, He K, Fu K. NiSb/nitrogen-doped carbon derived from Ni-based framework as advanced anode for lithium-ion batteries. Journal of Colloid and Interface Science. 2023;629(48):83-91.

Zhao J, Li N, Cheng Y. All-dielectric InSb metasurface for broadband and high-efficient thermal tunable terahertz reflective linear-polarization conversion. Optics Communications. 2023;536:129372.

Luo F, Wang J, Zhu C, He X, Zhang S, Wang J, Liu H, Sun Z. 18-Electron half-Heusler compound Ti 0.75 NiSb with intrinsic Ti vacancies as a promising thermoelectric material. Journal of Materials Chemistry A. 2022;10(17):9655-9669. DOI: 10.1039/d2ta00461e

Zheng XM, You JH, Fan JJ, Tu GP, Rong WQ, Li WJ, Wang YX, Tao S, Zhang PY, Zhang SY, Shen SY, Li JT, Huang L, Su S. Electrodeposited binder-free Sb/NiSb anode of sodium-ion batteries with excellent cycle stability and rate capability and new insights into its reaction mechanism by operando XRD analysis. Nano Energy. 2020;77(5):105123. DOI:10.1016/j.nanoen.2020.105123

Friedrich J, Muller G. Erlangen - An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades. Crystal Research and Technology. 2020;55(2): 1900053. DOI:10.1002/crat.201900053

Pendharkar M, Zhang B, Wu H, Zarassi A, Zhang P, Dempsey C, Lee J, Harrington S, Badawy G, Gazibegovic S, Veld R, Rossi M, Jung J, Chen A, Verheijen M, Hocevar M, Bakkers E, Palmstrom CJ, Frolov SM. Parity-preserving and magnetic field–resilient superconductivity in InSb nanowires with Sn shells. Science. 2021;372(6541):508-511. DOI:10.1126/science.aba5211

Jesenovec J, Zawilski KT, Alison P, Meschter S, Saha SK, Sepelak AJ, Schunemann PG. Controlling Morphology of NiSb Needles in InSb through Low Temperature Gradient Horizontal Gradient Freeze. Journal of Crystal Growth. 2023;626:127440. DOI:10.1016/j.jcrysgro.2023.127440

Mamedov IKh, Arasly D, Khalilova A, Rahimov RN. Anisotropic electrical properties of a eutectic InSb + MnSb composite. Inorganic Materials. 2016;52(4):423-428. DOI:10.1134/S0020168516040105

Ivanov O, Zakhvalinskii V, Pilyuk E, Kochura A, Kuzmenko A, Ril A. Resistivity superconducting transition in single-crystalline Cd0.95Ni0.05Sb system consisting of non-superconducting CdSb and NiSb phases. Chinese Journal of Physics. 2021;72(2):223-228. DOI:10.1016/j.cjph.2021.05.004

Zakhvalinskii VS, Borisenko AV, Nikulicheva TB, Kochura AV, Htet AZ, Pilyuk EA. Properties of solid solution (Cd0.69Zn0.31)3As2. St. Petersburg State Polytechnical University Journal. Physics and Mathematics. 2022;15(3.1): 22. DOI 10.18721/JPM.153.103

Laiho R, Lashkul AV, Lisunov KG, Lahderanta E, Shakhov MA, Zakhvalinskii VS. Hopping conductivity of ni-doped p-CdSb. Journal of Physics: Condensed Matter. 2008;20(29):295204-295214. DOI:10.1088/0953-8984/20/29/295204

Tran TT, Wong-Leung J, Smillie LA, Hallen A. High hole mobility and non-localized states in amorphous germanium. APL Materials. 2023;11(4):041115. DOI:10.1063/5.0146424

Ravich YuI, Nemov SA. Hopping conduction via strongly localized impurity states of indium in PbTe and its solid solutions. Semiconductors. 2002;36(1):3-23.


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Published

2024-12-30

How to Cite

Zakhvalinskii, V. S., Borisenko, A., Mashirov, A. V., Kochura, A. V., Pilyuk, E. A., & Sobolev, V. V. (2024). The effect of the orientation of NiSb single crystal needles on the electrical conductivity of composite single crystals (InSb)98:2 - (NiSb)1:8. Applied Mathematics & Physics, 56(4), 314-319. https://doi.org/10.52575/2687-0959-2024-56-4-314-319

Issue

Vol. 56 No. 4 (2024)

Section

Physics. Mathematical modeling

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